GPTR4180 phase controlled scr high reliability operation dc power supply ac drives voltage up to 3600 v average current 1800 a surge current 20 ka blocking characteristics characteristic conditions v rrm repetitive peak reverse voltage 3600 v v rsm non-repetitive peak reverse voltage 3700 v v drm repetitive peak off-state voltage 3600 v i drm repetitive peak off-state current, max. v drm , single phase, half wave, tj = tjmax 70 ma i rrm repetitive peak reverse current, max. v rrm , single phase, half wave, tj = tjmax 70 ma on-state characteristics i t(av) average on-state current sine wave,180 conduction, th = 55 c 1800 a i t(rms) r.m.s. on-state current sine wave,180 conduction, th = 55 c 2827 a i tsm surge on-state current non rep. half sine wave, 50 hz, v r = 0 v, t j = t jmax 20 ka i2t i2 t for fusing coordination 2000 ka2s v t(to) threshold voltage t j = t jmax 1,32 v r t on-state slope resistance t j = t jmax 0,34 m w v tm peak on-state voltage, max on-state current i t = 4100 a , tj = 25 c 2,90 v i h holding current, max t j = 25 c ma i l latching current, typ t j = 25 c ma triggering characteristics v gt gate trigger voltage t j = 25 c, v d = 5 v 3 v i gt gate trigger current t j = 25 c, v d = 5 v 500 ma v gd non-trigger voltage v d = 67% v rrm , t j = t jmax v p gm peak gate power dissipation pulse width 0.5 ms w p g(av) average gate power dissipation w i fgm peak gate current a v fgm peak gate voltage (forward) v v rgm peak gate voltage (reverse) v switching characteristics di/dt critical rate of rise of on-state current t j = t jmax 100 a/s dv/dt critical rate of rise of off-state voltage t j = t jmax 1000 v/s t q turn-off time, typ t j = t jmax , i t = 800 a, di/dt = -12.5 a/s 400 s vr = 100 v, vd = 67% vdrm, dv/dt = 20 v/s thermal and mechanical characteristics r th(j-c) thermal resistance (junction to case) double side cooled 0,012 c/w r th(c-h) thermal resistance (case to heatsink) double side cooled 0,001 c/w t jmax max operating junction temperature 125 c t stg storage temperature -40 / 125 c f clamping force 10% 30 kn mass 1,5 g document GPTR4180t001 value gps - green power semiconductors spa factory: via ungaretti 10, 16157 genova, italy phone: +39-010-667 1307 fax: +39-010-667 2459 web: www.gpsemi.it e-mail: info@gpsemi.it green power semiconductors
phase controlled scr GPTR4180 document GPTR4180t001 maximum surge current d.s. cooled 0 5 10 15 20 25 1 10 100 number of cycle current pulses [n] i tsm [a] on-state voltage drop 0 500 1000 1500 2000 2500 3000 3500 4000 0 0,5 1 1,5 2 2,5 3 v t [v] i t [a] t j =t jmax green power semiconductors thermal impedance (j-c) 0 0,002 0,004 0,006 0,008 0,01 0,012 0,014 0,001 0,01 0,1 1 10 100 time [s] z th(j-c) [c / w] current rating - sine wave 50 60 70 80 90 100 110 120 130 0 400 800 1200 1600 2000 i t [a] heatsink temperature [c] 180 90 120 60 30 power loss - sine wave 0 1000 2000 3000 4000 5000 6000 0 400 800 1200 1600 2000 i t [a] p f [w] 180 120 90 60 30 i n the interest of product improvement green power semiconductors reserves the right to change any specification given in this data sheet without notice. on-state voltage drop 0 500 1000 1500 2000 2500 3000 3500 4000 0 0,5 1 1,5 2 2,5 3 v t [v] i t [a] t j =t jmax
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